Discrete Semiconductor Products

MPS6511 PBFREE

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BIPOLAR TRANSISTORS - BJT NPN 30VCBO 20VCEO 3.0VEBO 10MA 2.5PF

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS - BJT NPN 30VCBO 20VCEO 3.0VEBO 10MA 2.5PF

Technical Specifications

Parameters and characteristics for this part

Specification	MPS6511 PBFREE

Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Supplier Device Package	TO-92-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	20 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Package / Case	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Transistor Type
Central Semiconductor Corp MPS6511 PBFREE	25	Through Hole	50 nA	TO-226AA	TO-226-3 TO-92-3	TO-92-3	20 V	150 °C	NPN
Central Semiconductor Corp MPS6511 TIN/LEAD	25	Through Hole	50 nA	TO-226AA	TO-226-3 TO-92-3	TO-92-3	20 V	150 °C	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.20
Mouser	N/A	5000	$ 0.20
		10000	$ 0.19

General part information

BIPOLAR TRANSISTORS - BJT NPN 30VCBO 20VCEO 3.0VEBO 10MA 2.5PF

Technical documentation and resources