Discrete Semiconductor Products

IDH10G65C5XKSA2

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INFINEON

SILICON CARBIDE SCHOTTKY DIODE, THINQ, SINGLE, 650 V, 10 A, 15 NC, TO-220

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DocumentsDatasheet Technical Data Sheet EN

Discrete Semiconductor Products

IDH10G65C5XKSA2

Active

INFINEON

SILICON CARBIDE SCHOTTKY DIODE, THINQ, SINGLE, 650 V, 10 A, 15 NC, TO-220

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IDH10G65C5XKSA2

Capacitance @ Vr, F	300 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	180 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	PG-TO220-2-1
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

IDH10G65 Series

Part	Supplier Device Package	Speed	Package / Case	Mounting Type	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology
INFINEON IDH10G65C5XKSA2	PG-TO220-2-1	500 mA	TO-220-2	Through Hole	300 pF	180 µA	10 A	1.7 V	650 V	0 ns	175 ░C	-55 °C	SiC (Silicon Carbide) Schottky

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	393	$ 4.45
	Tube	1	$ 2.96
		50	$ 2.34
		100	$ 2.01
		500	$ 1.96

Description

General part information

IDH10G65 Series

The CoolSiC™ Schottky diode 650 V, 10 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Qcx Vf).