Discrete Semiconductor Products

FDP5500

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N CHANNEL ULTRAFET 55V, 80A, 7M

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Discrete Semiconductor Products

Active

N CHANNEL ULTRAFET 55V, 80A, 7M

Technical Specifications

Parameters and characteristics for this part

Specification	FDP5500

Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	269 nC
Input Capacitance (Ciss) (Max) @ Vds	3565 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

N-Channel UltraFET Power MOSFET 55V, 80A, 7mΩ

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Qualification	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Power Dissipation (Max) [Max]	Grade	Vgs (Max)	FET Type
ON Semiconductor FDP5500-F085	MOSFET (Metal Oxide)	10 V	TO-220-3	3565 pF	269 nC	55 V	AEC-Q101	4 V	-55 °C	175 ░C	7 mOhm	Through Hole	TO-220-3	375 W	Automotive	20 V	N-Channel
ON Semiconductor FDP5500	MOSFET (Metal Oxide)	10 V	TO-220-3	3565 pF	269 nC	55 V		4 V	-55 °C	175 ░C	7 mOhm	Through Hole	TO-220-3	375 W		20 V	N-Channel
ON Semiconductor FDP5500	MOSFET (Metal Oxide)	10 V	TO-220-3	3565 pF	269 nC	55 V		4 V	-55 °C	175 ░C	7 mOhm	Through Hole	TO-220-3	375 W		20 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel UltraFET Power MOSFET 55 V, 80 A, 7 mΩ

Technical documentation and resources