Specification	SSM3J36TU,LF

Current - Continuous Drain (Id) @ 25°C	330 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.2 nC
Input Capacitance (Ciss) (Max) @ Vds	43 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Rds On (Max) @ Id, Vgs	1.31 Ohm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

SSM3J36TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -0.33 A, 1.31 Ω@4.5V, SOT-323F(UFM)

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM3J36TU,LF	330 mA	P-Channel	1.2 nC	43 pF	MOSFET (Metal Oxide)	20 V	8 V	UFM	1.5 V 4.5 V	150 °C	1.31 Ohm	Surface Mount	1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -0.33 A, 1.31 Ω@4.5V, SOT-323F(UFM)

Technical documentation and resources