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SOT669
Discrete Semiconductor Products

PSMN2R4-30YLDX

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Nexperia USA Inc.

N-CHANNEL 30 V, 2.4 MΩ LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWERS3 TECHNOLOGY

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SOT669
Discrete Semiconductor Products

PSMN2R4-30YLDX

Active
Nexperia USA Inc.

N-CHANNEL 30 V, 2.4 MΩ LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWERS3 TECHNOLOGY

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN2R4-30YLDX
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]31.3 nC
Input Capacitance (Ciss) (Max) @ Vds2256 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-100, SOT-669
Power Dissipation (Max)106 W
Rds On (Max) @ Id, Vgs2.4 mOhm
Supplier Device PackagePower-SO8, LFPAK56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.00
10$ 0.82
100$ 0.64
500$ 0.54
Digi-Reel® 1$ 1.00
10$ 0.82
100$ 0.64
500$ 0.54
N/A 1969$ 2.00
Tape & Reel (TR) 1500$ 0.40
3000$ 0.39

Description

General part information

PSMN2R4-30YLD Series

Ultra low QG, QGDand QOSSfor high system efficiency, especially at higher switching frequencies

Superfast switching with soft-recovery; s-factor > 1

Low spiking and ringing for low EMI designs