Discrete Semiconductor Products

BSDV10G120E2

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SIC SCHOTTKY DIODES 1200V 10A HIGH SURGE SIC SCHOTTKY DIODE IN TO247-2

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Discrete Semiconductor Products

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SIC SCHOTTKY DIODES 1200V 10A HIGH SURGE SIC SCHOTTKY DIODE IN TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	BSDV10G120E2

Capacitance @ Vr, F	481 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-247
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Reverse Recovery Time (trr)	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type
Bourns Inc. BSDV10G120E2	1.6 V	10 A	TO-247	50 µA	SiC (Silicon Carbide) Schottky	0 ns	500 mA	1.2 kV	481 pF	TO-247-2	175 ░C	-55 °C	Through Hole

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General part information

SIC SCHOTTKY DIODES 1200V 10A HIGH SURGE SIC SCHOTTKY DIODE IN TO247-2

Technical documentation and resources