Discrete Semiconductor Products
BUK9637-100E,118
ActiveNexperia USA Inc.
N-CHANNEL TRENCHMOS LOGIC LEVEL FET
Deep-Dive with AI
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Discrete Semiconductor Products
BUK9637-100E,118
ActiveNexperia USA Inc.
N-CHANNEL TRENCHMOS LOGIC LEVEL FET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BUK9637-100E,118 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 31 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22.8 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 2681 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 96 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 36 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V |
| Vgs(th) (Max) @ Id | 2.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 7902 | $ 2.79 | |
Description
General part information
BUK9637-100E Series
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
Documents
Technical documentation and resources