Discrete Semiconductor Products

GA05JT12-263

Obsolete

TRANS SJT 1200V 15A D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS SJT 1200V 15A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	GA05JT12-263

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	1.2 kV
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)	106 W
Supplier Device Package	TO-263-7
Technology	SiC (Silicon Carbide Junction Transistor)

Part	Package / Case	Supplier Device Package	Operating Temperature	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)
GeneSiC Semiconductor GA05JT12-263	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	TO-263-7	175 °C	Surface Mount	106 W	15 A	SiC (Silicon Carbide Junction Transistor)	1.2 kV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 5.63

General part information

1200 V 15A (Tc) 106W (Tc) Surface Mount TO-263-7

Technical documentation and resources