BUK9M9R5-40HX

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MOSFET N-CH 40V 40A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 40V 40A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9M9R5-40HX

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1537 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	55 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	16 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id [Max]	2.15 V

Part	Technology	Mounting Type	Vgs(th) (Max) @ Id [Max]	Grade	Vgs (Max) [Max]	Vgs (Max) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	FET Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
Freescale Semiconductor - NXP BUK9M9R5-40HX	MOSFET (Metal Oxide)	Surface Mount	2.15 V	Automotive	16 V	-10 V	24 nC	-55 °C	175 ░C	AEC-Q101	LFPAK33	1537 pF	4.5 V 10 V	9.5 mOhm	40 V	55 W	N-Channel
Freescale Semiconductor - NXP BUK9M9R1-40EX	MOSFET (Metal Oxide)	Surface Mount		Automotive				-55 °C	175 ░C	AEC-Q101	LFPAK33	2048 pF	5 V	7.3 mOhm	40 V		N-Channel	75 W	16.2 nC	10 V	64 A	2.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 40A (Tc) 55W (Tc) Surface Mount LFPAK33

Technical documentation and resources