Discrete Semiconductor Products

IRFR48ZTRLPBF

NRND

IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 11 MOHM;

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Discrete Semiconductor Products

NRND

IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 11 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR48ZTRLPBF

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC
Input Capacitance (Ciss) (Max) @ Vds	1720 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Max]	Operating Temperature [Min]
INFINEON IRFR48ZTRLPBF	MOSFET (Metal Oxide)	4 V	11 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 nC	Surface Mount	TO-252AA (DPAK)	55 V	42 A	20 V	10 V	1720 pF	N-Channel	175 °C	-55 °C
INFINEON IRFR48ZTRPBF	MOSFET (Metal Oxide)	4 V	11 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 nC	Surface Mount	TO-252AA (DPAK)	55 V	42 A	20 V	10 V	1720 pF	N-Channel	175 °C	-55 °C

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