Isolators

FODM121V

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ON Semiconductor

OPTOCOUPLER DC-IN 1-CH TRANSISTOR WITH BASE DC-OUT 4-PIN MINI-FLAT BOX

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DocumentsDatasheet Technical Data Sheet EN

Isolators

FODM121V

Active

ON Semiconductor

OPTOCOUPLER DC-IN 1-CH TRANSISTOR WITH BASE DC-OUT 4-PIN MINI-FLAT BOX

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FODM121V

Current - DC Forward (If) (Max)	50 mA
Current - Output / Channel	80 mA
Current Transfer Ratio (Max) [Max]	600 %
Current Transfer Ratio (Min) [Min]	50 %
Input Type	DC
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature [Max]	110 °C
Operating Temperature [Min]	-40 °C
Output Type	1.81 mOhm
Package / Case	4-SMD, Gull Wing
Rise / Fall Time (Typ) [custom]	3 µs
Rise / Fall Time (Typ) [custom]	3 µs
Supplier Device Package	4-SMD
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ)	1.3 V
Voltage - Isolation	3750 Vrms

FODM121 Series

Part	Voltage - Isolation	Number of Channels	Input Type	Current Transfer Ratio (Min) [Min]	Package / Case	Supplier Device Package	Current - DC Forward (If) (Max)	Mounting Type	Current Transfer Ratio (Max) [Max]	Current - Output / Channel	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Forward (Vf) (Typ)	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Vce Saturation (Max) [Max]	Output Type	Current Transfer Ratio (Max)
ON Semiconductor FODM121	3750 Vrms	1	DC	50 %	4-SMD Gull Wing	4-SMD	50 mA	Surface Mount	600 %	80 mA	-40 °C	110 °C	1.3 V	3 µs	3 µs	400 mV	1.81 mOhm
ON Semiconductor FODM121AV	3750 Vrms	1	DC	100 %	4-SMD Gull Wing	4-SMD	50 mA	Surface Mount		80 mA	-40 °C	110 °C	1.3 V	3 µs	3 µs	400 mV	1.81 mOhm	300 %
ON Semiconductor FODM121BR2	3750 Vrms	1	DC	50 %	4-SMD Gull Wing	4-SMD	50 mA	Surface Mount		80 mA	-40 °C	110 °C	1.3 V	3 µs	3 µs	400 mV	1.81 mOhm	150 %
ON Semiconductor FODM121AR1V	3750 Vrms	1	DC	100 %	4-SMD Gull Wing	4-SMD	50 mA	Surface Mount		80 mA	-40 °C	110 °C	1.3 V	3 µs	3 µs	400 mV	1.81 mOhm	300 %
ON Semiconductor FODM121R1	3750 Vrms	1	DC	50 %	4-SMD Gull Wing	4-SMD	50 mA	Surface Mount	600 %	80 mA	-40 °C	110 °C	1.3 V	3 µs	3 µs	400 mV	1.81 mOhm
ON Semiconductor FODM121EV	3750 Vrms	1	DC	50 %	4-SMD Gull Wing	4-SMD	50 mA	Surface Mount	600 %	80 mA	-40 °C	110 °C	1.3 V	3 µs	3 µs	400 mV	1.81 mOhm
ON Semiconductor FODM121R2	3750 Vrms	1	DC	50 %	4-SMD Gull Wing	4-SMD	50 mA	Surface Mount	600 %	80 mA	-40 °C	110 °C	1.3 V	3 µs	3 µs	400 mV	1.81 mOhm
ON Semiconductor FODM121AR2	3750 Vrms	1	DC	100 %	4-SMD Gull Wing	4-SMD	50 mA	Surface Mount		80 mA	-40 °C	110 °C	1.3 V	3 µs	3 µs	400 mV	1.81 mOhm	300 %
ON Semiconductor FODM121V	3750 Vrms	1	DC	50 %	4-SMD Gull Wing	4-SMD	50 mA	Surface Mount	600 %	80 mA	-40 °C	110 °C	1.3 V	3 µs	3 µs	400 mV	1.81 mOhm
ON Semiconductor FODM121D	3750 Vrms	1	DC	50 %	4-SMD Gull Wing	4-SMD	50 mA	Surface Mount	600 %	80 mA	-40 °C	110 °C	1.3 V	3 µs	3 µs	400 mV	1.81 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Box	1	$ 0.88
		10	$ 0.57
		100	$ 0.37
		1000	$ 0.30
		3000	$ 0.28
		6000	$ 0.27
		12000	$ 0.26
		27000	$ 0.26
Newark	Each	2500	$ 0.16
		10000	$ 0.16
ON Semiconductor	N/A	1	$ 0.16

Description

General part information

FODM121 Series

The FODM121 series, FODM124, and FODM2701 consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54 mm. The FODM2705 consists of two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation.