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DocumentsGCMX020A120B2T1P | Datasheet
Deep-Dive with AI
DocumentsGCMX020A120B2T1P | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | GCMX020A120B2T1P |
|---|---|
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Current - Continuous Drain (Id) @ 25°C | 30 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 235 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 6200 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | Module |
| Power - Max [Max] | 263 W |
| Rds On (Max) @ Id, Vgs | 25 mOhm |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 10 | $ 72.12 | |
Description
General part information
GCMX020A120B2T1P
1200V 20 SIC MOSFET SIX-PACK MOD
Documents
Technical documentation and resources