Discrete Semiconductor Products

W2865HA680

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DIODE GEN PURP 6.8KV 4825A W121

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Discrete Semiconductor Products

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DIODE GEN PURP 6.8KV 4825A W121

Technical Specifications

Parameters and characteristics for this part

Specification	W2865HA680

Current - Average Rectified (Io)	4825 A
Current - Reverse Leakage @ Vr	100 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-200AD
Reverse Recovery Time (trr)	53 µs
Speed [Min]	200 mA, 500 ns
Supplier Device Package	W121
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	6800 V
Voltage - Forward (Vf) (Max) @ If	4.04 V

Part	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Package / Case	Technology	Speed [Min]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Current - Average Rectified (Io)
LITTELFUSE W2865HA720	W121	7200 V	53 µs	100 mA	DO-200AD	Standard	200 mA 500 ns	-40 °C	150 °C	4.04 V	Chassis Mount	4825 A
LITTELFUSE W2865HA680	W121	6800 V	53 µs	100 mA	DO-200AD	Standard	200 mA 500 ns	-40 °C	150 °C	4.04 V	Chassis Mount	4825 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 6800 V 4825A Chassis Mount W121

Technical documentation and resources