Specification	2SC5712(TE12L,F)

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	400
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	1 W
Supplier Device Package	PW-MINI
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	140 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

2SC5712 Series

Bipolar Transistors, NPN Bipolar Transistor, 50 V, 3 A, PW-Mini

Part	Power - Max [Max]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Transistor Type
Toshiba Semiconductor and Storage 2SC5712(TE12L,F)	1 W	PW-MINI	100 nA	Surface Mount	3 A	150 °C	400	50 V	TO-243AA	140 mV	NPN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1243	$ 0.71

General part information

Bipolar Transistors, NPN Bipolar Transistor, 50 V, 3 A, PW-Mini

Technical documentation and resources