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NXP Semiconductors-PMZB1200UPEYL MOSFETs Trans MOSFET P-CH 30V 0.41A 3-Pin DFN-B T/R
Discrete Semiconductor Products

PMBT2907AMBYL

Active
Nexperia USA Inc.

TRANS GP BJT PNP 60V 0.6A 250MW 3-PIN DFN-B T/R

NXP Semiconductors-PMZB1200UPEYL MOSFETs Trans MOSFET P-CH 30V 0.41A 3-Pin DFN-B T/R
Discrete Semiconductor Products

PMBT2907AMBYL

Active
Nexperia USA Inc.

TRANS GP BJT PNP 60V 0.6A 250MW 3-PIN DFN-B T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationPMBT2907AMBYL
Current - Collector (Ic) (Max) [Max]600 mA
Current - Collector Cutoff (Max) [Max]10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100 hFE
Frequency - Transition210 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case3-XFDFN
Power - Max [Max]250 mW
QualificationAEC-Q101
Supplier Device PackageDFN1006B-3
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 19018$ 0.31

Description

General part information

PMBT2907AMB Series

PNP switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-Mounted Device (SMD) plastic package.