Discrete Semiconductor Products
PBHV2160Z-QX
ActiveNexperia USA Inc.
600 V, 0.1 A NPN HIGH-VOLTAGE LOW VCESAT TRANSISTOR
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
PBHV2160Z-QX
ActiveNexperia USA Inc.
600 V, 0.1 A NPN HIGH-VOLTAGE LOW VCESAT TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PBHV2160Z-QX |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 70 |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power - Max [Max] | 650 mW |
| Qualification | AEC-Q101 |
| Supplier Device Package | SOT-223 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 125 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 844 | $ 1.09 | |
Description
General part information
PBHV2160Z-Q Series
NPN high-voltage low VCEsatBreakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources