Discrete Semiconductor Products

PEMH2,115

NRND

TRANS PREBIAS 2NPN 50V SOT-666

Search across all available documentation for this part.

Discrete Semiconductor Products

NRND

TRANS PREBIAS 2NPN 50V SOT-666

Technical Specifications

Parameters and characteristics for this part

Specification	PEMH2,115

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	300 mW
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	SOT-666
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	150 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Base (R1)	Transistor Type	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Resistor - Emitter Base (R2)	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Package / Case	Power - Max [Max]
Freescale Semiconductor - NXP PEMH2,115	50 V	47 kOhms	2 NPN - Pre-Biased (Dual)	100 mA	150 mV	47000 Ohms	SOT-666	1 µA	80	Surface Mount	SOT-563 SOT-666	300 mW
Freescale Semiconductor - NXP PEMH2,315	50 V	47 kOhms	2 NPN - Pre-Biased (Dual)	100 mA	150 mV	47000 Ohms	SOT-666	1 µA	80	Surface Mount	SOT-563 SOT-666	300 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Technical documentation and resources