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STMICROELECTRONICS STW13NK60Z
Discrete Semiconductor Products

IPW60R145CFD7XKSA1

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INFINEON

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 145 MOHM; FAST RECOVERY DIODE

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STMICROELECTRONICS STW13NK60Z
Discrete Semiconductor Products

IPW60R145CFD7XKSA1

Active
INFINEON

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 145 MOHM; FAST RECOVERY DIODE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPW60R145CFD7XKSA1
Current - Continuous Drain (Id) @ 25°C16 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC
Input Capacitance (Ciss) (Max) @ Vds1330 pF
Mounting TypeSurface Mount, Through Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)83 W
Rds On (Max) @ Id, Vgs145 mOhm
Supplier Device PackagePG-TO247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 4$ 4.42
99993$ 4.42
Tube 1$ 4.85
10$ 3.22
100$ 2.30
500$ 1.90
1000$ 1.82
NewarkEach 1$ 5.33
10$ 4.47
25$ 3.60
50$ 3.37
100$ 3.13
480$ 3.12
720$ 2.78

Description

General part information

IPW60R145 Series

The600V CoolMOS™ CFD7is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Documents

Technical documentation and resources