Specification	SSM6N36TU,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature	1.5 V
Gate Charge (Qg) (Max) @ Vgs	1.23 nC
Input Capacitance (Ciss) (Max) @ Vds	46 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	630 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

SSM6N36TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.5 A, 0.66 Ω@4.5V, SOT-363F(UF6)

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Supplier Device Package	Mounting Type	Package / Case	Technology	Operating Temperature	FET Feature	FET Feature	Vgs(th) (Max) @ Id	Configuration
Toshiba Semiconductor and Storage SSM6N36TU,LF	1.23 nC	20 V	46 pF	630 mOhm	500 mA	500 mW	UF6	Surface Mount	6-SMD Flat Leads	MOSFET (Metal Oxide)	150 °C	Logic Level Gate	1.5 V	1 V	2 N-Channel (Dual)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	8056	$ 0.51

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.5 A, 0.66 Ω@4.5V, SOT-363F(UF6)

Technical documentation and resources