Discrete Semiconductor Products

VS-AZH3106FP-M3

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DIODE GEN PURP 600V 30A TO3PF

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 30A TO3PF

Technical Specifications

Parameters and characteristics for this part

Specification	VS-AZH3106FP-M3

Capacitance @ Vr, F	19 pF
Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SC-94
Reverse Recovery Time (trr)	90 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-3PF
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	2.15 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Capacitance @ Vr, F	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]
Vishay General Semiconductor - Diodes Division VS-AZH3106FP-M3	175 ░C	-55 °C	200 mA 500 ns	19 pF	Standard	600 V	TO-3PF	30 A	Through Hole	90 ns	10 µA	SC-94	2.15 V

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General part information

Diode 600 V 30A Through Hole TO-3PF

Technical documentation and resources