Discrete Semiconductor Products

SI7844DP-T1-E3

Obsolete

MOSFET 2N-CH 30V 6.4A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 6.4A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7844DP-T1-E3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25¯C	6.4 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	20 nC
Mounting Type	Surface Mount
Power - Max [Max]	1.4 W
Supplier Device Package	PowerPAKÛ SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4 V

Part	Power - Max [Max]	Drain to Source Voltage (Vdss)	Configuration	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25¯C	FET Feature	Supplier Device Package	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI7844DP-T1-E3	1.4 W	30 V	2 N-Channel (Dual)	20 nC	2.4 V	Surface Mount	6.4 A	Logic Level Gate	PowerPAKÛ SO-8 Dual	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SI7844DP-T1-GE3	1.4 W	30 V	2 N-Channel (Dual)	20 nC	2.4 V	Surface Mount		Logic Level Gate	PowerPAK® SO-8 Dual	MOSFET (Metal Oxide)	PowerPAK® SO-8 Dual	6.4 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 6.4A 1.4W Surface Mount PowerPAKÛ SO-8 Dual

Technical documentation and resources