Specification	PBSS5230T-QR

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	300
Frequency - Transition	200 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Qualification	AEC-Q101
Supplier Device Package	TO-236AB
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	350 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

PBSS5230T-Q Series

30 V, 2 A PNP low VCEsat transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Qualification	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Supplier Device Package	Transistor Type	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Package / Case	Grade	Current - Collector (Ic) (Max) [Max]
Nexperia USA Inc. PBSS5230T-QR	300	150 °C	100 nA	AEC-Q101	30 V	Surface Mount	TO-236AB	PNP	200 MHz	350 mV	SC-59 SOT-23-3 TO-236-3	Automotive	2 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.10

General part information

PNP low VCEsattransistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources