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BAS21LD-QYL
Discrete Semiconductor Products

BAS21LD-QYL

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Nexperia USA Inc.

DIODE STD 200V 330MA DFN1006D2

Technical Specifications

Parameters and characteristics for this part

SpecificationBAS21LD-QYL
Capacitance @ Vr, F2 pF
Current - Average Rectified (Io)330 mA
Current - Reverse Leakage @ Vr100 nA
GradeAutomotive
Mounting TypeWettable Flank, Surface Mount
Operating Temperature - Junction150 ¯C
Package / Case2-XDFN
QualificationAEC-Q101
Reverse Recovery Time (trr)50 ns
Speed500 ns, 200 mA
Supplier Device PackageDFN1006D-2
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.05

Description

General part information

BAS21LD-Q Series

High-voltage switching diode, encapsulated in an leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.