Discrete Semiconductor Products

SPA04N60C3XKSA1

Obsolete

MOSFET N-CH 650V 4.5A TO220-FP

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 650V 4.5A TO220-FP

Technical Specifications

Parameters and characteristics for this part

Specification	SPA04N60C3XKSA1

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	31 W
Rds On (Max) @ Id, Vgs	950 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON SPA04N60C3XKSA1	MOSFET (Metal Oxide)	Through Hole	10 V	950 mOhm	31 W	150 °C	-55 °C	TO-220-3 Full Pack	N-Channel	20 V	650 V	25 nC	4.5 A	3.9 V
INFINEON SPA04N50C3XKSA1	MOSFET (Metal Oxide)	Through Hole	10 V	950 mOhm	31 W	150 °C	-55 °C	TO-220-3 Full Pack	N-Channel	20 V	560 V		4.5 A	3.9 V	470 pF	22 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 650 V 4.5A (Tc) 31W (Tc) Through Hole PG-TO220-3-31

Technical documentation and resources

No documents available