Discrete Semiconductor Products

SQS423EN-T1_BE3

Obsolete

MOSFET P-CH 30V 16A POWERPAK1212

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 16A POWERPAK1212

Technical Specifications

Parameters and characteristics for this part

Specification	SQS423EN-T1_BE3

Current - Continuous Drain (Id) (Tc)	16 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	26 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1975 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	62.5 W
Qualification	AEC-Q101
Rds On (Max)	21 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Qualification	Technology	Grade	Rds On (Max)	Package Name	Vgs(th) (Max)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Package / Case
Vishay Dale SQS423EN-T1_BE3	Surface Mount	-55 °C	175 °C	P-Channel	AEC-Q101	MOSFET (Metal Oxide)	Automotive	21 mOhm	PowerPAK® 1212-8	2.5 V	62.5 W	10 V	4.5 V	20 V	30 V	1975 pF	16 A	26 nC	PowerPAK® 1212-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 1.46	1m+

3D models and CAD resources for this part

General part information

P-Channel 30 V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources