Discrete Semiconductor Products

MCAC90N10Y-TP

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MOSFET N-CH 100 90A DFN5060

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Discrete Semiconductor Products

Active

MOSFET N-CH 100 90A DFN5060

Technical Specifications

Parameters and characteristics for this part

Specification	MCAC90N10Y-TP

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	66 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	120 W
Rds On (Max) @ Id, Vgs	5.2 mOhm
Supplier Device Package	DFN5060
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Package / Case
MCC (Micro Commercial Components) MCAC90N10Y-TP	66 nC	4 V	DFN5060	120 W	Surface Mount	4600 pF	90 A	5.2 mOhm	N-Channel	150 °C	-55 °C	100 V	MOSFET (Metal Oxide)	20 V	8-PowerTDFN
MCC (Micro Commercial Components) MCAC90N10Y-TP	66 nC	4 V	DFN5060	120 W	Surface Mount	4600 pF	90 A	5.2 mOhm	N-Channel	150 °C	-55 °C	100 V	MOSFET (Metal Oxide)	20 V	8-PowerTDFN

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General part information

N-Channel 100 V 90A 120W Surface Mount DFN5060

Technical documentation and resources

No documents available