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ONSEMI MMBZ18VALT1G.
Discrete Semiconductor Products

MMBT5550LT3G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 140 V, 600 MA, 225 MW, SOT-23, SURFACE MOUNT

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Search across all available documentation for this part.

DocumentsProduct Change Notice ENTechnical Data Sheet EN+2
ONSEMI MMBZ18VALT1G.
Discrete Semiconductor Products

MMBT5550LT3G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 140 V, 600 MA, 225 MW, SOT-23, SURFACE MOUNT

Deep-Dive with AI

DocumentsProduct Change Notice ENTechnical Data Sheet EN+2

Technical Specifications

Parameters and characteristics for this part

SpecificationMMBT5550LT3G
Current - Collector (Ic) (Max) [Max]600 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]60 hFE
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]225 mW
Supplier Device PackageSOT-23-3 (TO-236)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max)140 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.20
10$ 0.14
100$ 0.07
500$ 0.06
1000$ 0.04
2000$ 0.03
5000$ 0.03
Digi-Reel® 1$ 0.20
10$ 0.14
100$ 0.07
500$ 0.06
1000$ 0.04
2000$ 0.03
5000$ 0.03
Tape & Reel (TR) 10000$ 0.02
NewarkEach (Supplied on Full Reel) 6000$ 0.03
18000$ 0.03
30000$ 0.02
ON SemiconductorN/A 1$ 0.02

Description

General part information

MMBT5550L Series

The High Voltage NPN Bipolar Transistor is designed for general purpose switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.