Discrete Semiconductor Products

SQ4532AEY-T1_BE3

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MOSFET N/P-CH 30V 7.3A 8SOIC

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Discrete Semiconductor Products

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MOSFET N/P-CH 30V 7.3A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SQ4532AEY-T1_BE3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	5.3 A, 7.3 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	10.2 nC
Gate Charge (Qg) (Max) @ Vgs	7.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	535 pF, 528 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	3.3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	70 mOhm, 31 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Qualification	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Power - Max [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Grade	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case [y]	Package / Case [x]
Vishay General Semiconductor - Diodes Division SQ4532AEY-T1_BE3	Surface Mount	AEC-Q101	5.3 A 7.3 A	528 pF 535 pF	N and P-Channel	3.3 W	8-SOIC	30 V	31 mOhm 70 mOhm	2.5 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	Automotive	10.2 nC	7.8 nC	8-SOIC	3.9 mm	0.154 in

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General part information

Mosfet Array 30V 7.3A (Tc), 5.3A (Tc) 3.3W (Tc) Surface Mount 8-SOIC

Technical documentation and resources