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2SC6076(TE16L1,NV)
Discrete Semiconductor Products

2SC6076(TE16L1,NV)

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 80 V, 3 A, NEW PW-MOLD

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2SC6076(TE16L1,NV)
Discrete Semiconductor Products

2SC6076(TE16L1,NV)

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 80 V, 3 A, NEW PW-MOLD

Technical Specifications

Parameters and characteristics for this part

Specification2SC6076(TE16L1,NV)
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]180
Frequency - Transition150 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]10 W
Supplier Device PackagePW-MOLD
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 5$ 0.65
50$ 0.47
100$ 0.32
200$ 0.31
500$ 0.24
DigikeyN/A 1575$ 0.91

Description

General part information

2SC6076 Series

Bipolar Transistors, NPN Bipolar Transistor, 80 V, 3 A, New PW-Mold