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SI7925DN-T1-GE3
Discrete Semiconductor Products

SI7925DN-T1-GE3

Obsolete
Vishay Dale

MOSFET 2P-CH 12V 4.8A PPAK 1212

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SI7925DN-T1-GE3
Discrete Semiconductor Products

SI7925DN-T1-GE3

Obsolete
Vishay Dale

MOSFET 2P-CH 12V 4.8A PPAK 1212

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSI7925DN-T1-GE3
Channel Count2
ConfigurationP-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id)4.8 A
Drain to Source Voltage (Vdss)12 V
FET FeatureLogic Level Gate
Gate Charge (Max)12 nC
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® 1212-8 Dual
Package NamePowerPAK® 1212-8 Dual
Power - Max1.3 W
Rds On (Max)42 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTape & Reel (TR) 3000$ 0.60<1d
6000$ 0.57

CAD

3D models and CAD resources for this part

Description

General part information

SI7925 Series

Mosfet Array 12V 4.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual

Documents

Technical documentation and resources

No documents available