Specification	SSM6K804R,LF

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1110 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max) [Max]	1.5 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	6-TSOP-F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

SSM6K804R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch, MOSFET, 40V, 12A, 18mΩ@4.5V, TSOP6F

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Operating Temperature	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Vgs (Max)	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]
Toshiba Semiconductor and Storage SSM6K804R,LF	4.5 V 10 V	7.5 nC	12 A	40 V	MOSFET (Metal Oxide)	175 °C	12 mOhm	N-Channel	1110 pF	6-SMD Flat Leads	20 V	6-TSOP-F	Surface Mount	2.4 V	1.5 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	4849	$ 1.09

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch, MOSFET, 40V, 12A, 18mΩ@4.5V, TSOP6F

Technical documentation and resources