Discrete Semiconductor Products

MCU30N02-TP

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MOSFET N-CH 20V 30A DPAK

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Discrete Semiconductor Products

Active

MOSFET N-CH 20V 30A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	MCU30N02-TP

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	FET Type	Technology	Vgs(th) (Max) @ Id
MCC (Micro Commercial Components) MCU30N02-TP	20 V	Surface Mount	30 A	DPAK	29 nC	175 °C	-55 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	1700 pF	7 mOhm	1.8 V	4.5 V	10 V	N-Channel	MOSFET (Metal Oxide)	1 V
MCC (Micro Commercial Components) MCU30N02-TP	20 V	Surface Mount	30 A	DPAK	29 nC	175 °C	-55 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	1700 pF	7 mOhm	1.8 V	4.5 V	10 V	N-Channel	MOSFET (Metal Oxide)	1 V

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General part information

N-Channel 20 V 30A (Tc) 30W (Tc) Surface Mount DPAK

Technical documentation and resources