Specification	SSM3J35AMFV,L3F

Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	42 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-723
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	VESM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

SSM3J35AMFV Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, SOT-723(VESM)

Part	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Operating Temperature	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM3J35AMFV,L3F	1.4 Ohm	P-Channel	42 pF	Surface Mount	1 V	10 V	SOT-723	150 °C	MOSFET (Metal Oxide)	VESM	250 mA	150 mW	1.2 V	4.5 V	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	24348	$ 0.21

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, SOT-723(VESM)

Technical documentation and resources