Specification	NTLJF3117PTAG

Current - Continuous Drain (Id) @ 25°C	2.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	531 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	710 mW
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	6-WDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

NTLJF3118N Series

Single P-Channel µCool™ Power MOSFET with Schottky Diode -20V -4.1A 100mΩ

Part	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Feature	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor NTLJF3118NTAG	6-WDFN (2x2)	700 mW	3.7 nC	65 mOhm	20 V	271 pF	-55 °C	150 °C	MOSFET (Metal Oxide)	1.8 V 4.5 V	Surface Mount	Schottky Diode (Isolated)	N-Channel	2.6 A	1 V	12 V
ON Semiconductor NTLJF3117PTAG	6-WDFN (2x2)	710 mW	6.2 nC	100 mOhm	20 V		-55 °C	150 °C	MOSFET (Metal Oxide)	1.8 V 4.5 V	Surface Mount	Schottky Diode (Isolated)	P-Channel	2.3 A	1 V	8 V	531 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET and Schottky Diode 20 V, 4.6 A, µCool™ N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package