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HN1D03FU,LF
Discrete Semiconductor Products

HN1D03FU,LF

Active
Toshiba Semiconductor and Storage

DIODES, 80 V/0.1 A SWITCHING DIODE, SOT-363(US6)

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HN1D03FU,LF
Discrete Semiconductor Products

HN1D03FU,LF

Active
Toshiba Semiconductor and Storage

DIODES, 80 V/0.1 A SWITCHING DIODE, SOT-363(US6)

Technical Specifications

Parameters and characteristics for this part

SpecificationHN1D03FU,LF
Current - Average Rectified (Io) (per Diode)80 mA
Current - Reverse Leakage @ Vr500 nA
Diode Configuration2 Pair CA + CC
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]125 °C
Package / CaseSOT-363, SC-88, 6-TSSOP
Reverse Recovery Time (trr)4 ns
Speed200 mA
SpeedAny Speed
Supplier Device PackageUS6
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]80 V
Voltage - Forward (Vf) (Max) @ If [Max]1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 3554$ 0.26

Description

General part information

HN1D03FU Series

Diodes, 80 V/0.1 A Switching diode, SOT-363(US6)