Discrete Semiconductor Products

IPP034N03LGHKSA1

Obsolete

MOSFET N-CH 30V 80A TO220-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 80A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP034N03LGHKSA1

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds	5300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	94 W
Rds On (Max) @ Id, Vgs	3.4 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type	Power Dissipation (Max)
INFINEON IPP034N03LGHKSA1	20 V	3.4 mOhm	30 V	PG-TO220-3-1	2.2 V	5300 pF	175 °C	-55 °C	MOSFET (Metal Oxide)	TO-220-3	25 nC	4.5 V 10 V	Through Hole	N-Channel	94 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.61

General part information

N-Channel 30 V 80A (Tc) 94W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources