Discrete Semiconductor Products

SISA01DN-T1-GE3

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MOSFET P-CH 30V 22.4A/60A PPAK

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Discrete Semiconductor Products

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MOSFET P-CH 30V 22.4A/60A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISA01DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	22.4 A, 60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	84 nC
Input Capacitance (Ciss) (Max) @ Vds	3490 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	3.7 W, 52 W
Rds On (Max) @ Id, Vgs	4.9 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	16 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Vgs (Max) [Max]	Vgs (Max) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]
Vishay General Semiconductor - Diodes Division SISA01DN-T1-GE3	22.4 A 60 A	-55 °C	150 °C	MOSFET (Metal Oxide)	PowerPAK® 1212-8	30 V	4.5 V 10 V	3490 pF	P-Channel	3.7 W 52 W	16 V	-20 V	84 nC	PowerPAK® 1212-8	Surface Mount	4.9 mOhm	2.2 V

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General part information

P-Channel 30 V 22.4A (Ta), 60A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources