Discrete Semiconductor Products

RF1K4909396

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12V 2.5A 130MΩ@5V,2.5A 2 P-CHANNEL SOIC-8 MOSFETS ROHS

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Discrete Semiconductor Products

Active

12V 2.5A 130MΩ@5V,2.5A 2 P-CHANNEL SOIC-8 MOSFETS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	RF1K4909396

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	12 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	24 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	775 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Configuration	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Feature
ON Semiconductor RF1K4915496	MOSFET (Metal Oxide)	8-SOIC	60 V	32 nC	8-SOIC	3.9 mm	0.154 in	340 pF	130 mOhm	4 V	Surface Mount	2 A	2 N-Channel (Dual)	2 W	-55 °C	150 °C
ON Semiconductor RF1K4909396	MOSFET (Metal Oxide)	8-SOIC	12 V	24 nC	8-SOIC	3.9 mm	0.154 in		130 mOhm	2 V	Surface Mount	2.5 A	2 P-Channel	2 W	-55 °C	150 °C	775 pF	Logic Level Gate

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	485	$ 0.62
LCSC	N/A	1	$ 0.00

General part information

Mosfet Array 12V 2.5A (Ta) 2W (Ta) Surface Mount 8-SOIC

Technical documentation and resources

No documents available