Discrete Semiconductor Products

IPW60R041C6FKSA1

NRND

INFINEON

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 41 MOHM;

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Discrete Semiconductor Products

IPW60R041C6FKSA1

NRND

INFINEON

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 41 MOHM;

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPW60R041C6FKSA1

Current - Continuous Drain (Id) @ 25°C	77.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	290 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6530 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	481 W
Rds On (Max) @ Id, Vgs	41 mOhm
Supplier Device Package	PG-TO247-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPW60R041 Series

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Supplier Device Package	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
INFINEON IPW60R041C6FKSA1	TO-247-3	77.5 A	Through Hole	481 W	290 nC	6530 pF	3.5 V	41 mOhm	150 °C	-55 °C	N-Channel	PG-TO247-3-1	MOSFET (Metal Oxide)	20 V	10 V	600 V
INFINEON IPW60R041P6FKSA1	TO-247-3	77.5 A	Through Hole	481 W			4.5 V	41 mOhm	150 °C	-55 °C	N-Channel	PG-TO247-3	MOSFET (Metal Oxide)	20 V	10 V	600 V	8180 pF	170 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3820	$ 13.37
	Tube	1	$ 16.00
		10	$ 11.33
		100	$ 8.75
Newark	Each	1	$ 13.25
		10	$ 11.68
		25	$ 11.67
		50	$ 10.89
		100	$ 10.10
		480	$ 9.77

Description

General part information

IPW60R041 Series

The IPW60R041C6 is a 600V N-channel CoolMOS™ Power MOSFET designed according to the Superjunction (SJ) principle with high class innovation. The C6 MOSFET provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. CoolMOS™ Superjunction power MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems.

Documents

Technical documentation and resources