Discrete Semiconductor Products
PMZ1000UN,315
NRNDNexperia USA Inc.
N-CHANNEL TRENCHMOS STANDARD LEVEL FET
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Discrete Semiconductor Products
PMZ1000UN,315
NRNDNexperia USA Inc.
N-CHANNEL TRENCHMOS STANDARD LEVEL FET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PMZ1000UN,315 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 480 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 1.8 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 0.89 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 43 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-883, SC-101 |
| Power Dissipation (Max) | 350 mW |
| Rds On (Max) @ Id, Vgs | 1 Ohm |
| Supplier Device Package | SOT-883 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 8 V |
| Vgs(th) (Max) @ Id | 950 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 14095 | $ 0.45 | |
Description
General part information
PMZ1000UN Series
N-channel TrenchMOS standard level FET
Documents
Technical documentation and resources