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IRFH5020TRPBF
Discrete Semiconductor Products

IRFH5007TRPBF

Obsolete
INFINEON

IR MOSFET™ N-CHANNEL MOSFET ; SUPERSO8 5X6 PACKAGE; 5.9 MOHM;

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IRFH5020TRPBF
Discrete Semiconductor Products

IRFH5007TRPBF

Obsolete
INFINEON

IR MOSFET™ N-CHANNEL MOSFET ; SUPERSO8 5X6 PACKAGE; 5.9 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFH5007TRPBF
Current - Continuous Drain (Id) @ 25°C17 A, 100 A
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]98 nC
Input Capacitance (Ciss) (Max) @ Vds4290 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)156 W, 3.6 W
Rds On (Max) @ Id, Vgs5.9 mOhm
Supplier Device Package8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
MouserN/A 1$ 3.08
1000$ 1.54
2000$ 1.39
4000$ 1.37

Description

General part information

IRFH5007 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources