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DocumentsGP3D020A065A | Datasheet
Deep-Dive with AI
DocumentsGP3D020A065A | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | GP3D020A065A |
|---|---|
| Capacitance @ Vr, F | 1247 pF |
| Current - Reverse Leakage @ Vr | 75 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | TO-220-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 2.24 | |
Description
General part information
GP3D020A065A
DIODE SIL CARB 650V 20A TO220-2
Documents
Technical documentation and resources