Discrete Semiconductor Products

IPA60R1K5CEXKSA1

Obsolete

COOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 FULLPAK PACKAGE; 1500 MOHM; PRICE/PERFORMANCE

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Discrete Semiconductor Products

Obsolete

COOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 FULLPAK PACKAGE; 1500 MOHM; PRICE/PERFORMANCE

Technical Specifications

Parameters and characteristics for this part

Specification	IPA60R1K5CEXKSA1

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.4 nC
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	FET Type
INFINEON IPA60R1K5CEXKSA1	9.4 nC	TO-220-3 Full Pack	20 V	200 pF	MOSFET (Metal Oxide)	1.5 Ohm	600 V	10 V	3.5 V	PG-TO220-FP	5 A	Through Hole	-40 °C	150 °C	20 W	N-Channel

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General part information

N-Channel 600 V 5A (Tc) 20W (Tc) Through Hole PG-TO220-FP

Technical documentation and resources