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RN2901 - Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/4.7 kΩ, SOT-363(US6)
Discrete Semiconductor Products

SSM6N44FU,LF

Active
Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 MOSFET, 30 V, 0.1 A, 4.0 Ω@4V, SOT-363(US6)

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RN2901 - Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/4.7 kΩ, SOT-363(US6)
Discrete Semiconductor Products

SSM6N44FU,LF

Active
Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 MOSFET, 30 V, 0.1 A, 4.0 Ω@4V, SOT-363(US6)

Technical Specifications

Parameters and characteristics for this part

SpecificationSSM6N44FU,LF
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C100 mA
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds [Max]8.5 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-363, SC-88, 6-TSSOP
Power - Max [Max]200 mW
Rds On (Max) @ Id, Vgs4 Ohm
Supplier Device PackageUS6
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 13853$ 0.32

Description

General part information

SSM6N44FU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 0.1 A, 4.0 Ω@4V, SOT-363(US6)