IGW40N120H3FKSA1
ActiveTHE IGW40N120H3 IS A 1200 V, 40 A IGBT DISCRETE IN TO-247 PACKAGE
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IGW40N120H3FKSA1
ActiveTHE IGW40N120H3 IS A 1200 V, 40 A IGBT DISCRETE IN TO-247 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IGW40N120H3FKSA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Gate Charge | 185 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 483 W |
| Supplier Device Package | PG-TO247-3-1 |
| Switching Energy | 3.16 mJ |
| Td (on/off) @ 25°C [custom] | 290 ns |
| Td (on/off) @ 25°C [custom] | 30 ns |
| Test Condition | 600 V, 12 Ohm, 40 A, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2.4 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IGW40N120 Series
The IGW40N120H3 is a High Speed IGBT in Trench and field-stop technology recommended in combination with SiC diode IDH15S120. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.