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INFINEON AUIRF7648M2TR
Discrete Semiconductor Products

IRF6623TRPBF

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INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ S PACKAGE; 5.7 MOHM;

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INFINEON AUIRF7648M2TR
Discrete Semiconductor Products

IRF6623TRPBF

Active
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ S PACKAGE; 5.7 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF6623TRPBF
Current - Continuous Drain (Id) @ 25°C16 A, 55 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]17 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1360 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseDirectFET™ Isometric ST
Power Dissipation (Max)42 W, 1.4 W
Rds On (Max) @ Id, Vgs5.7 mOhm
Supplier Device PackageDIRECTFET™ ST
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.12
10$ 1.37
100$ 0.95
500$ 0.91
Digi-Reel® 1$ 2.12
10$ 1.37
100$ 0.95
500$ 0.91
N/A 3702$ 3.00
Tape & Reel (TR) 4800$ 0.91
NewarkEach (Supplied on Cut Tape) 1$ 2.70
10$ 1.97
25$ 1.83
50$ 1.68
100$ 1.54
250$ 1.41
500$ 1.28
1000$ 1.13

Description

General part information

IRF6623 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources