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Technical Specifications

Parameters and characteristics for this part

SpecificationADPA7002C-KIT
Current - Supply600 mA
Frequency (Max)44 GHz
Frequency (Min)20 GHz
Gain15 dB
Mounting TypeSurface Mount
Noise Figure5 dB
P1dB28 dBm
Package / CaseDie
Package NameDie
RF TypeGeneral Purpose
Test Frequency (Maximum)44 GHz
Test Frequency (Minimum)34 GHz
Voltage - Supply5 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
ArrowN/A 2$ 166.271m+

CAD

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Description

General part information

ADPA7002 Series

The ADPA7002CHIP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), distributed power amplifier that operates from 20 GHz to 44 GHz. The amplifier provides 15 dB of small signal gain, 28 dBm output power at 1 dB gain compression (P1dB), and a typical output third-order intercept (IP3) of 40 dBm. The amplifier requires 600 mA from a 5 V supply on VDD2A, VDD2B, and VDD1. The ADPA7002CHIP also features inputs/outputs (I/Os) that are internally matched to 50 Ω, and facilitates integration into multichip modules (MCMs). All data is taken with the on substrate chip connected via two wire bonds that are 0.025 mm (1 mil) wide and 0.31 mm (12 mils) long.ApplicationsMilitary and spaceTest instrumentation