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M10xx204_M30xx204 - Block Diagram
Integrated Circuits (ICs)

M30042040108X0IWAY

Obsolete
Renesas Electronics Corporation

NON-VOLATILE 4MB HIGH PERFORMANCE MRAM, 3.0V

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M10xx204_M30xx204 - Block Diagram
Integrated Circuits (ICs)

M30042040108X0IWAY

Obsolete
Renesas Electronics Corporation

NON-VOLATILE 4MB HIGH PERFORMANCE MRAM, 3.0V

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationM30042040108X0IWAY
Clock Frequency108 MHz
Memory FormatRAM
Memory Organization4, 1 M
Memory Size512 kb
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case8-WDFN Exposed Pad
Supplier Device Package8-DFN (5x6)
TechnologyMRAM (Magnetoresistive RAM)
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 225$ 10.48

Description

General part information

M30042040108 Series

The M3004204 series is a 4Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3004204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3004204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

Documents

Technical documentation and resources