Integrated Circuits (ICs)

AS4C64M8D1-5BIN

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DRAM DDR1, 512MB, 64M X 8, 2.5V, 60BALL TFBGA, 200MHZ, INDUSTRIAL TEMP - TRAY

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Integrated Circuits (ICs)

Active

DRAM DDR1, 512MB, 64M X 8, 2.5V, 60BALL TFBGA, 200MHZ, INDUSTRIAL TEMP - TRAY

Technical Specifications

Parameters and characteristics for this part

Part	Package / Case [z]	Package / Case	Package / Case [y]	Memory Organization	Memory Interface	Operating Temperature [Min]	Operating Temperature [Max]	Memory Type	Access Time	Voltage - Supply [Min]	Voltage - Supply [Max]	Write Cycle Time - Word, Page	Memory Format	Supplier Device Package	Mounting Type	Memory Size	Clock Frequency
Alliance Memory, Inc. AS4C64M8D1-5TCNTR	0.4 in	66-TSSOP	10.16 mm	64 M	Parallel	0 °C	70 °C	Volatile	700 ps	2.3 V	2.7 V	15 ns	DRAM	66-TSOP II	Surface Mount	64 MB	200 MHz
Alliance Memory, Inc. AS4C64M8D1-5BIN		60-TFBGA		64 M	Parallel	-40 ¯C	85 C	Volatile	700 ps	2.3 V	2.7 V	15 ns	DRAM	60-FBGA (8x13)	Surface Mount	64 MB	200 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

DRAM DDR1, 512MB, 64M X 8, 2.5V, 60BALL TFBGA, 200MHZ, INDUSTRIAL TEMP - TRAY

Technical documentation and resources

No documents available