Discrete Semiconductor Products

VS-VSKE320-20PBF

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DIODE GEN PURP 2KV 320A MAGNAPAK

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Discrete Semiconductor Products

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DIODE GEN PURP 2KV 320A MAGNAPAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-VSKE320-20PBF

Current - Average Rectified (Io)	320 A
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	3-MAGN-A-PAK™
Speed [Min]	200 mA, 500 ns
Supplier Device Package	MAGN-A-PAK®
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	2000 V

Part	Mounting Type	Current - Average Rectified (Io)	Speed [Min]	Supplier Device Package	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VS-VSKE320-20PBF	Chassis Mount	320 A	200 mA 500 ns	MAGN-A-PAK®	-40 °C	150 °C	3-MAGN-A-PAK™	Standard	2000 V
Vishay General Semiconductor - Diodes Division VS-VSKE320-12PBF	Chassis Mount	320 A	200 mA 500 ns	MAGN-A-PAK®	-40 °C	150 °C	3-MAGN-A-PAK™	Standard	1.2 kV	50 mA
Vishay General Semiconductor - Diodes Division VSKE320-08	Chassis Mount	320 A	200 mA 500 ns	MAGN-A-PAK®			3-MAGN-A-PAK™	Standard	800 V	50 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 2000 V 320A Chassis Mount MAGN-A-PAK®

Technical documentation and resources